Photoluminescence of As-Grown and Thermally Annealed InGaAsN/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source molecular beam epitaxy using a N2 radio frequency plasma source. Photoluminescence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/GaAs quantum wells is shown to increase N incorporation and photoluminescence efficiency. A PL peak of 1.35 µm has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 °C. Room temperature pulsed operation of InGaAsN/GaAs single quantum well laser was demonstrated. © 1999 American Vacuum Society.
X. Yang, "Photoluminescence of As-Grown and Thermally Annealed InGaAsN/GaAs Quantum Wells Grown by Molecular Beam Epitaxy," Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, American Institute of Physics (AIP), Jan 1999.
The definitive version is available at http://dx.doi.org/10.1116/1.590710
Mechanical and Aerospace Engineering
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© 1999 American Institute of Physics (AIP), All rights reserved.