Photoreflectance Spectroscopy of Strained (In)GaAsN/GaAs Multiple Quantum Wells
The effect of a variation of the indium and nitrogen concentrations in Inᵪ Ga[subscript 1-x]As[subscript 1-y]N[subscript y]/GaAs multiquantum wells grown by molecular beam epitaxy is studied systematically by room temperature photoreflectance spectroscopy. The band gap redshift caused by a nitrogen fraction of 1.5% decreases by as much as 30% as the indium fraction increases from 0% to 20%. A moderate increase of electron effective mass (Δmₑ~0.03m₀) is found in all samples containing nitrogen (y≳1%). In compressively strained quantum wells, the energy separation between the first confined heavy and light hole energy levels decreases in a regular manner as the nitrogen fraction increases from 0% to 1.7%, suggesting that the modification of the valence bands due to nitrogen incorporation can be explained by the strain variation. © 2002 American Institute of Physics.
J. B. Heroux et al., "Photoreflectance Spectroscopy of Strained (In)GaAsN/GaAs Multiple Quantum Wells," Journal of Applied Physics, American Institute of Physics (AIP), Jan 2002.
The definitive version is available at https://doi.org/10.1063/1.1507817
Mechanical and Aerospace Engineering
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© 2002 American Institute of Physics (AIP), All rights reserved.