Title

Fabrication of ZnO Nanowall-Network Ultraviolet Photodetector on Si Substrates

Abstract

ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si (111) substrates. The nanostructures have preferred orientation along the c axis. The nanostructures are about 10 to 20 nm thick and about 50 nm tall. The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum, and no decrease from 250 to 360 nm. with the applied bias below 5 V, the dark current was below 6 ?A, and the peak responsivity of 15 A/W was achieved at 360 nm. The UV (360 nm) to visible (450 nm) rejection ratio of around two orders could be extracted from the spectra response. © 2011 Chinese Institute of Electronics.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

Detector; MBE; ZnO

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Physics - IOP Publishing, All rights reserved.


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