Solution-Processed Cavity and Slow-Light Quantum Electrodynamics in Near-Infrared Silicon Photonic Crystals

Editor(s)

Lam, Nghi Q.

Abstract

We demonstrate enhanced emission of solution-processed sparse lead sulfide quantum dots(QDs) coupled to confined as well as propagating modes in siliconphotonic crystals at near-infrared communications wavelengths. In the cavity case, by using cold-cavity characterization using on-board waveguides or cross-polarization techniques, we show that the coupled QD lineshape is identical to the cold-cavity spectra. For the photonic crystal waveguides (PhCWGs), we use transmission spectra for the PhCWG as well as three-dimensional finite difference time domain techniques to validate enhancements due to the propagating mode. The observation of room-temperature quantum electrodynamics using postfabrication QD integration techniques is promising for further studies.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

Quantum Dots; Photonic Crystal Waveguides; Photonic Crystals; Silicon; II-VI Semiconductors; Cavity Quatum Electrodynamics; Finite Difference Time Domain Calculations; Linewidths; Metal Insulator Semiconductor Structures; Photoluminescence

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2009 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 2009

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