Title

Optical Investigation of InGaAsN Structures for Photodetector Applications

Abstract

The optical properties of In.15Ga.85As1-xNx structures for the fabrication of photodetectors are investigated. An expression for the bulk bandgap as a function of the nitrogen fraction is obtained from x-ray diffraction, photoreflectance and photoluminescence measurements. Optical absorption of undoped MQW structures show that the cutoff wavelength is extended due to the presence of nitrogen. A functioning heterojunction phototransistor was fabricated. Photocurrent spectra show that a responsivity higher than 1.5 A/W is obtained with a cutoff wavelength of 1.16 micrometers. I-V measurements under different light levels show that a peak gain of 5 is obtained with a collector current of 260 (mu) A and a dark current lower than 2 nA with a 10V bias.

Meeting Name

Photodetectors: Materials and Devices VI

Department(s)

Mechanical and Aerospace Engineering

Sponsor(s)

International Society for Optical Engineering

Keywords and Phrases

Absorption; InGaAsN; Multi-Quantum Wells; Photocurrent; Photoluminescence; Photoreflectance; Phototransistor; X-Ray Diffraction

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2001 SPIE -- The International Society for Optical Engineering, All rights reserved.


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