Optical Investigation of InGaAsN Structures for Photodetector Applications
The optical properties of In.15Ga.85As1-xNx structures for the fabrication of photodetectors are investigated. An expression for the bulk bandgap as a function of the nitrogen fraction is obtained from x-ray diffraction, photoreflectance and photoluminescence measurements. Optical absorption of undoped MQW structures show that the cutoff wavelength is extended due to the presence of nitrogen. A functioning heterojunction phototransistor was fabricated. Photocurrent spectra show that a responsivity higher than 1.5 A/W is obtained with a cutoff wavelength of 1.16 micrometers. I-V measurements under different light levels show that a peak gain of 5 is obtained with a collector current of 260 (mu) A and a dark current lower than 2 nA with a 10V bias.
J. B. Heroux et al., "Optical Investigation of InGaAsN Structures for Photodetector Applications," Proceedings of SPIE - The International Society for Optical Engineering, SPIE -- The International Society for Optical Engineering, Jan 2001.
The definitive version is available at https://doi.org/10.1117/12.429411
Photodetectors: Materials and Devices VI
Mechanical and Aerospace Engineering
International Society for Optical Engineering
Keywords and Phrases
Absorption; InGaAsN; Multi-Quantum Wells; Photocurrent; Photoluminescence; Photoreflectance; Phototransistor; X-Ray Diffraction
Article - Conference proceedings
© 2001 SPIE -- The International Society for Optical Engineering, All rights reserved.