Title

Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant

Abstract

Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1999 the Institution of Engineering and Technology (The IET), All rights reserved.


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