Title

High-Temperature Characteristics of 1.3 µm InGaAsN:Sb/GaAs Multiple-Quantum-Well Lasers Grown by Molecular-Beam Epitaxy

Abstract

1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm² was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T₀) of 92 and 54 K for operating temperatures below and above 75°C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/°C. © 2000 American Institute of Physics.

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2000 American Institute of Physics (AIP), All rights reserved.


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