Title

The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts

Abstract

A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.

Department(s)

Materials Science and Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Materials Research Society, All rights reserved.

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