The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts

Author

Dorothea E. Burk
Joseph William Newkirk, Missouri University of Science and TechnologyFollow
Myung-Suk Jo

Abstract

A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.

Recommended Citation

D. E. Burk et al., "The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts," Proceedings of the Materials Research Society Symposium (1985, Boston, MA), vol. 54, Materials Research Society, Feb 1985.

The definitive version is available at https://doi.org/10.1557/PROC-54-761

Meeting Name

Materials Research Society Symposium E-Thin Films-Interfaces and Phenomena (1985: Dec. 2-6, Boston, MA)

Department(s)

Materials Science and Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1985 Materials Research Society, All rights reserved.

Publication Date

01 Feb 1985