Oxidation of Zirconium Diboride- Silicon Carbide at 1500°C in a Low Partial Pressure of Oxygen
The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and ∼350 ppm CO2 was used to produce an oxygen partial pressure of ∼10-10 Pa at 1500°C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X-ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO-CO2 produced a non-protective oxide surface scale.
A. Rezaie et al., "Oxidation of Zirconium Diboride- Silicon Carbide at 1500°C in a Low Partial Pressure of Oxygen," Journal of the American Ceramic Society, American Ceramic Society, Jan 2006.
The definitive version is available at http://dx.doi.org/10.1111/j.1551-2916.2006.01229.x
Materials Science and Engineering
Keywords and Phrases
High Temperature; Low Pressure; Oxygen Pressure; Partial Pressure; Zirconium; Oxidation; Scanning electron microscopy; Silicon carbide
Article - Journal
© 2006 American Ceramic Society, All rights reserved.