Title

Oxidation of Zirconium Diboride- Silicon Carbide at 1500°C in a Low Partial Pressure of Oxygen

Abstract

The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and ∼350 ppm CO2 was used to produce an oxygen partial pressure of ∼10-10 Pa at 1500°C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X-ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO-CO2 produced a non-protective oxide surface scale.

Department(s)

Materials Science and Engineering

Keywords and Phrases

High Temperature; Low Pressure; Oxygen Pressure; Partial Pressure; Zirconium

Library of Congress Subject Headings

Oxidation
Scanning electron microscopy
Silicon carbide

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2006 American Ceramic Society, All rights reserved.


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