Hot Pressing of Tantalum Carbide with and Without Sintering Aids

Author

Shi C. Zhang, Missouri University of Science and TechnologyFollow
Greg Hilmas, Missouri University of Science and TechnologyFollow
Douglas M. Deason
William Fahrenholtz, Missouri University of Science and TechnologyFollow

Abstract

Densification of Tantalum Carbide was studied by hot pressing at temperatures ranging from 1900 to 2400 C with and without sintering additives. Without sintering additives, the relative density increased from 75% at 1900 C to 96% at 2400C. a microstructural examination showed no observable grain growth up to 2300 C. Densification was enhanced with Carbon (C) and/or B4C additions. TaC with a 0.78 wt% C addition achieved a relative density of 97% at 2300C. Additions of 0.36 wt% B4C or 0.43 wt% B4C and 0.13 wt% C increased the relative density to 98% at 2200C, accompanied by rapid grain growth at 2100C and highertemperatures.

Recommended Citation

S. C. Zhang et al., "Hot Pressing of Tantalum Carbide with and Without Sintering Aids," Journal of the American Ceramic Society, Wiley-Blackwell, Jan 2007.

The definitive version is available at https://doi.org/10.1111/j.1551-2916.2006.01416.x

Department(s)

Materials Science and Engineering

Keywords and Phrases

Hot Pressing; Sintering Aid; Tantalum Carbide

International Standard Serial Number (ISSN)

0002-7820; 1551-2916

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2007 Wiley-Blackwell, All rights reserved.

Publication Date

01 Jan 2007