Abstract
We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.
Recommended Citation
H. Li et al., "Tailoring Spin-Orbit Torque in Diluted Magnetic Semiconductors," Applied Physics Letters, American Institute of Physics (AIP), Jan 2013.
The definitive version is available at https://doi.org/10.1063/1.4806981
Department(s)
Materials Science and Engineering
Keywords and Phrases
Crystal Structure; Exchange Interactions (Electron); Fermi Surface; Gallium Arsenide; Galvanomagnetic Effects; III-V Semiconductors; Indium Compounds; Localised States; Magnetisation; Manganese Compounds; Semimagnetic Semiconductors; Spin Polarised Transport; Spin-Orbit Interactions; Torque
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2013 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 2013
