Title

Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films

Abstract

Crystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.

Department(s)

Materials Science and Engineering

Keywords and Phrases

Crystallization; Amorphous; Alumina; Thin-Film; Capacitor

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Elsevier, All rights reserved.

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