Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films

Author

Jack Murray
Kai Song
Wayne Huebner, Missouri University of Science and TechnologyFollow
Matthew O'Keefe, Missouri University of Science and TechnologyFollow

Abstract

Crystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.

Recommended Citation

J. Murray et al., "Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films," Materials Letters, Elsevier, May 2012.

The definitive version is available at https://doi.org/10.1016/j.matlet.2012.01.039

Department(s)

Materials Science and Engineering

Keywords and Phrases

Crystallization; Amorphous; Alumina; Thin-Film; Capacitor

International Standard Serial Number (ISSN)

0167-577X

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Elsevier, All rights reserved.

Publication Date

01 May 2012