High-Temperature Electrical Conductivity of Aluminium Nitride

Author

Von Richards, Missouri University of Science and TechnologyFollow
Tsengying Tien
Robert D. Pehlke

Abstract

The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and beryllium was measured as a function of temperature from 800 to 1200° C and over a range of nitrogen partial pressure from 10² to 10⁵ Pa. The effect of beryllium dopant, the independence of conductivity from nitrogen partial pressure, and the observed activation energy suggested extrinsic electronic species or aluminium vacancies as charge carriers. Polarization measurements made with one electrode blocking to ionic species indicated that the aluminium nitride with oxygen impurity was an extrinsic electronic conductor.

Recommended Citation

V. Richards et al., "High-Temperature Electrical Conductivity of Aluminium Nitride," Journal of Materials Science, vol. 22, no. 9, pp. 3385 - 3390, Kluwer Academic Publishers, Sep 1987.

The definitive version is available at https://doi.org/10.1007/BF01161209

Department(s)

Materials Science and Engineering

Keywords and Phrases

Crystals - Impurities; Electric Conductivity - High Temperature Effects; Extrinsic Electronic Conductor; Ionic Conductor; Polarization Measurements; Aluminum Compounds

International Standard Serial Number (ISSN)

0022-2461

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1987 Kluwer Academic Publishers, All rights reserved.

Publication Date

01 Sep 1987