Title

High Energy Density Dielectrics For Symmetric Blumleins

Abstract

Multilayer, tape cast ceramics are being developed for use in large area, high voltage devices in order to achieve high specific energy densities (>106 J/m3) and physical size reduction. In particular, symmetric Blumleins are desired with the following properties:

  • High voltage hold off (≥300 kV)
  • High, nondispersive permittivity: ≈100 to 900
  • Ability to be fabricated into various shapes and sizes
  • Surface flashover inhibition at the edge
  • Ability to be triggered by surface flashover switching

The compositions being pursued are based on pure BaTiO3 dielectrics. Our approach is to add glass phase additions which result in not only near theoretical densities, but also allow for fabrication of more complex geometries through high temperature creep. Variations in the volume fraction and connectivity of the glassy phase allow for direct control of the permittivity as well as energy density. Structures up to 5 inches in diameter have been fabricated and pulse-tested at field strengths over 300 kV/cm. A strong dependence of breakdown strength and permittivity has been observed and correlated with microstructure and the glass composition. This paper presents the interactive effects of manipulation of these variables.

Meeting Name

12th IEEE International Symposium on Applications of Ferroelectrics (2000: Jul. 21-Aug. 2, Honolulu, HI)

Department(s)

Materials Science and Engineering

Keywords and Phrases

Barium titanate; Ceramic materials; Composition; Creep; Crystal microstructure; Flashover; High temperature effects; Multilayers; Permittivity; High energy density dielectrics; Surface flashover inhibition; Symmetric Blumleins; Voltage failure; Dielectric materials

International Standard Book Number (ISBN)

0-7803-5940-2

International Standard Serial Number (ISSN)

1099-4734

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2000 Institute of Electrical and Electronics Engineers Inc. (IEEE), All rights reserved.

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