Abstract

Size-induced lattice relaxation was observed for nanoscale CeO2 single crystals with an average size from 4 to 60 nm. Results showed the finest crystallites exhibited no strain-induced line broadening, while high temperature annealing resulted in larger grain sizes and significant strains. The observed shift in the x-ray diffraction lattice parameters was assumed to be due to the formation of defects on the lattice, specifically oxygen vacancies. Modeling revealed that the oxygen vacancy concentration ([V••O]) was found to be ≈4 x 1020/cm3 for the 4 nm crystallites, and decreased two orders of magnitude for larger 60 nm single crystals.

Department(s)

Materials Science and Engineering

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2001 American Institute of Physics (AIP), All rights reserved.

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