Oxidation of Zirconium Diboride-Silicon Carbide at 1500⁰C at a Low Partial Pressure of Oxygen
The oxidation behavior of zirconium diboride containing 30 vol% silicon carbide particulates was investigated under reducing conditions. A gas mixture of CO and~350 ppm CO2 was used to produce an oxygen partial pressure of~ 10 -10 Pa at 1500⁰C. The kinetics of the growth of the reaction layer were examined for reaction times of up to 8 h. Microstructures and chemistries of reaction layers were characterized using scanning electron microscopy and X-ray diffraction analysis. The kinetic measurements, the microstructure analysis, and a thermodynamic model indicate that oxidation in CO-CO2 produced a non-protective oxide surface scale.
A. M. Rezaie et al., "Oxidation of Zirconium Diboride-Silicon Carbide at 1500⁰C at a Low Partial Pressure of Oxygen," Journal of the American Ceramic Society, vol. 89, no. 10, pp. 3240-3245, Wiley-Blackwell, Oct 2006.
The definitive version is available at http://dx.doi.org/10.1111/j.1551-2916.2006.01229.x
Materials Science and Engineering
Keywords and Phrases
Kinetic measurements; Microstructure analysis; Zirconium diboride; Oxidation; Partial pressure; Reaction kinetics; Scanning electron microscopy; X ray diffraction analysis; Zirconium compounds; Silicon carbide
International Standard Serial Number (ISSN)
Article - Journal
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