Growth of II-IV-V₂ Chalcopyrite Nitrides by Molecular Beam Epitaxy
Synthesis of crystalline MgGeN2 thin solid films is achieved using the technique of molecular beam epitaxy (MBE). The details of the epitaxial process are described. The microstructures of these films are investigated by both x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Comparison of the lattice structure with powder diffraction standards suggests the lattice structure may be orthorhombic with a high degree of texture. Morphology is evaluated by atomic force microscopy, and a periodic pattern of growth mounds is observed. A formalism for dynamical roughening is applied to quantify the mounded surface features. Mounds are found to have an average spacing of 235 nm, and the surface exhibits a saturation value of 22 nm for the root mean correlated height difference. Diffusion bias is discussed as a mechanism for the formation of surface mounds.
J. E. Van Nostrand et al., "Growth of II-IV-V₂ Chalcopyrite Nitrides by Molecular Beam Epitaxy," Journal of Electronic Materials, The Minerals, Metals & Materials Society (TMS), Oct 2005.
Materials Science and Engineering
Keywords and Phrases
MBE; Chalcopyrite Nitrides; Epitaxy; Molecular beam epitaxy
International Standard Serial Number (ISSN)
Article - Journal
© 2005 the Minerals, Metals & Materials Society (TMS), All rights reserved.