Title

Microstructural Changes in Beta-silicon Nitride Grains Upon Crystallizing the Grain-boundary Glass

Abstract

Crystallizing the grain-boundary glass of a liquid-phase-sintered Si3N4 ceramic for 2 h or less at 1500° led to formation of δ-Y2Si2O7. after 5 h at 1500°, the δ-Y2Si2O7 had transformed to β-Y2Si2O7 with a concurrent dramatic increase in dislocation density within β-Si3N4 grains. Reasons for the increased dislocation density are discussed. Annealing for 20 h at 1500° reduced dislocation densities to the levels found in as-sintered material.

Department(s)

Materials Science and Engineering

Keywords and Phrases

Silicon Nitride; Microstructure; Grain Boundaries; Grains; Glass

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1989 Wiley-Blackwell, All rights reserved.

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