Title

Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films

Abstract

The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si-N bonds replace Si-O bonds as the nitrogen content of the films is increased.

Department(s)

Materials Science and Engineering

Sponsor(s)

National Science Foundation (U.S.)

Comments

Supported by the National Science Foundation under Grant No. DMR–8119476

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1986 John Wiley & Sons, All rights reserved.


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