Title

Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films

Abstract

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Department(s)

Materials Science and Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1986 American Institute of Physics (AIP), All rights reserved.

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