Title

Spin Relaxation in InGaN Quantum Disks in GaN Nanowires

Abstract

The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of 100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values.

Department(s)

Materials Science and Engineering

Keywords and Phrases

Spin Lifetime; GaN Nanowire; InGaN Quantum Disk; D'yakonov-Perel'; TRPL; Quantum Disk-In-Nanowire

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Chemical Society (ACS), All rights reserved.

Share

 
COinS