Simulation of transient characteristics and occupation dynamics in hydrogenated amorphous silicon thin-film transistors
Electrical and Computer Engineering
M.S. in Electrical Engineering
University of Missouri--Rolla
ix, 156 pages
© 1989 John N. Bullock, All rights reserved.
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Full-text not available: Request this publication directly from Missouri S&T Library or contact your local library.http://laurel.lso.missouri.edu/record=b2232550~S5
Bullock, John N., "Simulation of transient characteristics and occupation dynamics in hydrogenated amorphous silicon thin-film transistors" (1989). Masters Theses. 803.
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