"The effect of high electric field strengths (10⁴ to 10⁵ V/cm) present during neutron radiation on the neutron-induced defects is determined by utilizing the high electric field strength inherent in the emitter-base transistion region of an n-p-n transistor. A method is presented for the separation of neutron and gamma effects. Previous theoretical work on the ratio of base current increase to collector current decrease is applied to experimental data. The variations of the space-charge region volume damage introduction rate with neutron fluence and the average electric field strength are determined experimentally in order to obtain a measure of this effect. The dependence of the space-charge region volume damage introduction rate on neutron fluence is found empirically to be a power law relationship. The space-charge region volume damage introduction rate is shown empirically to also have a power law relationship with respect to the average electric field strength"--Abstract, page ii.
Goben, C. A.
Hardtke, Fred C.
Bolon, Albert E., 1939-2006
Materials Science and Engineering
M.S. in Metallurgical Engineering
U.S. Atomic Energy Commission
University of Missouri--Rolla. Graduate Center for Materials Research
University of Missouri--Rolla
vi, 53 pages
© 1972 Paul Edward Johnson, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Electric fields -- Measurement
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1066582~S5
Johnson, Paul Edward, "The electric field strength dependence of neutron-induced defects in silicon P-N junctions" (1972). Masters Theses. 7241.