Masters Theses

Abstract

"A discrete, deterministic, mathematical model is developed for the neutral bulk base region of graded base devices which accounts for both the effects of recombination and the built-in electric field in the bulk base region at low, intermediate, and moderate current/injection levels. This model is applied to a study of neutron radiation effects in double diffused silicon transistors. Exact expressions are developed for the injected emitter, base and collector currents, the base recombination term, and the ratio of base current increase to collector current decrease as functions of device geometry, impurity profile, and neutron fluence. Neutron-induced current gain degradation is demonstrated to be dominated at low and intermediate current/injection levels by a neutron-induced increase in space-charge region recombination (reduction in emitter efficiency), and at moderate and high current/injection levels by a neutron-induced increase in neutral base region recombination (reduction in base recombination term). A method of accurately predicting device current-voltage characteristics from low to moderate current/injection levels (including "bendaway") is presented. Damage coefficients for the neutron-induced collector current decrease and for the neutron-induced bulk base recombination current increase are computed"--Abstract, page ii.

Advisor(s)

Goben, C. A.

Committee Member(s)

Bolon, Albert E., 1939-2006
Venteicher, LeRoy P.

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Sponsor(s)

U.S. Atomic Energy Commission

Publisher

University of Missouri--Rolla

Publication Date

1970

Pagination

viii, 79 pages, A8, B9, C9

Note about bibliography

Includes bibliographical references.

Rights

© 1970 Jonas Bereisa, Jr, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Subject Headings

Electric fields -- Measurement -- Mathematical models
Semiconductors -- Recombination -- Mathematical models
Transistors -- Effect of radiation on
Neutron irradiation
Semiconductors -- Recombination

Thesis Number

T 2464

Print OCLC #

6028050

Electronic OCLC #

864827972

Download

Share

 
COinS