"It has not been possible in the past to characterize a transistor or other semiconductor device with regard to its performance in a fast neutron (E>10keV) environment when the device is operated at high (>100 MHz) frequencies. Using the scattering (s-) parameter concept, which regards a device as a two-port "black box", a full characterization of the trends in the neutron bombarded high-frequency performance of a typical transistor can be made. Scattering parameters are not only an accurate means of describing the high-frequency performance of any device, but are now reasonably easily measured with the advent on the market of reliable, highly accurate s-parameter test sets. Methods which exist to permit the rapid design of high-frequency transistor circuits, once the device scattering parameters are known, are reviewed. The effects of neutron bombardment on a high-frequency transistor amplifier are found to be generally enhancing, rather than degrading as expected, if the device is operating near or above the published minimum fT"--Abstract, page i.
Goben, C. A.
Bolon, Albert E., 1939-2006
Adair, James E.
Dillman, Norman G., 1938-2010
Electrical and Computer Engineering
M.S. in Electrical Engineering
U.S. Atomic Energy Commission
University of Missouri--Rolla
v, 48 pages, 45 pages
© 1969 David Leslie Gray, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Fast neutrons -- Scattering
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b2614130~S5
Gray, David Leslie, "Fast neutron effects on transistor scattering parameters" (1969). Masters Theses. 6985.