Masters Theses
Abstract
"Considerable work has been done on the theory of thermal runaway and the relationship between transistor junction temperature and collector power dissipation. The first part of this thesis is a review of literature. An equation for the normalized junction temperature and its peak value is developed. From this equation, the junction temperature at the thermal runaway point for a given maximum power dissipation could be determined. The second part of this thesis is experimental. The author examined the thermal runaway points for eight different transistors in the basic common emitter class A circuit which operated under no signal DC conditions"--Abstract, page iii.
Advisor(s)
Carson, Ralph S.
Committee Member(s)
Boone, Jack L.
Ho, C. Y. (Chung You), 1933-1988
Department(s)
Electrical and Computer Engineering
Degree Name
M.S. in Electrical Engineering
Publisher
University of Missouri--Rolla
Publication Date
1968
Pagination
ix, 38 pages
Rights
© 1968 Jerry H. Lee, All rights reserved.
Document Type
Thesis - Open Access
File Type
text
Language
English
Subject Headings
Electronic apparatus and appliances -- Temperature control
Transistors
Thesis Number
T 2116
Print OCLC #
5995603
Electronic OCLC #
805937763
Link to Catalog Record
Recommended Citation
Lee, Jerry H., "Thermal runaway in power transistors" (1968). Masters Theses. 6906.
https://scholarsmine.mst.edu/masters_theses/6906
