"Considerable work has been done on the theory of thermal runaway and the relationship between transistor junction temperature and collector power dissipation. The first part of this thesis is a review of literature. An equation for the normalized junction temperature and its peak value is developed. From this equation, the junction temperature at the thermal runaway point for a given maximum power dissipation could be determined. The second part of this thesis is experimental. The author examined the thermal runaway points for eight different transistors in the basic common emitter class A circuit which operated under no signal DC conditions"--Abstract, page iii.
Carson, Ralph S.
Boone, Jack L.
Ho, C. Y. (Chung You), 1933-1988
Electrical and Computer Engineering
M.S. in Electrical Engineering
University of Missouri--Rolla
ix, 38 pages
© 1968 Jerry H. Lee, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Electronic apparatus and appliances -- Temperature control
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1067702~S5
Lee, Jerry H., "Thermal runaway in power transistors" (1968). Masters Theses. 6906.