A sessile drop technique employing a drop placement method has been used to investigate the wetting behavior and interfacial phenomena between aluminum and single crystal α-alumina. Measurements were made under a flowing mixture of H2 and He atomsphere from 1200°C to 1600°C. Acute contact angles decreased continuously in all cases during the 8-hour experimental time. Neither the oxygen partial pressure of the flowing gas nor the orientation of the single crystal alumina substrate affected the contact angles, but the shapes of crystals grown at the substrate-metal interfaces were dependent on the orientation of the substrate surface to some extent. Indirect evidence showed that Al2O, the gaseous product of the reaction between Al and Al2O3, was responsible for the crystals grown at the substrate-metal interfaces
Ownby, P. D.
Anderson, H. U. (Harlan U.)
Dawson, Darrow Finch, 1931-2007
Materials Science and Engineering
M.S. in Ceramic Engineering
University of Missouri--Rolla
x, 86 pages
© 1988 Kewen K. Li, All rights reserved.
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Link to Catalog RecordElectronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library. http://laurel.lso.missouri.edu/record=b2138587~S5
Li, Ke Wen K., "Sessile drop studies of aluminum on sapphire" (1988). Masters Theses. 687.