Masters Theses

Keywords and Phrases

Reactive ion etching

Abstract

"In this study, dry film photoresist was patterned using UV lithography and the sidewall profile was optimized to achieve vertical sidewalls. Sidewall verticality of dry film is very important for better pattern transfer"--Abstract, page iv.

Advisor(s)

OKeefe, Matt

Committee Member(s)

Kim, Chang-Soo
Miller, F. Scott, 1956-

Department(s)

Materials Science and Engineering

Degree Name

M.S. in Materials Science and Engineering

Sponsor(s)

National Science Foundation (U.S.)

Publisher

University of Missouri--Rolla

Publication Date

Summer 2007

Journal article titles appearing in thesis/dissertation

  • Process development and application of dry film photoresist in MEMS
  • Process development for reactive-ion etching of dry film photoresist

Pagination

x, 66 pages

Rights

© 2007 Phaninder Reddy Kanikella, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Library of Congress Subject Headings

Microelectromechanical systems
Semiconductors -- Etching

Thesis Number

T 9243

Print OCLC #

233638949

Electronic OCLC #

182857762

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