The interfacial phenomena of liquid copper of sapphire substrates

Author

Jenq Liu

Abstract

"The wetting behavior of liquid copper on the sapphire is effected by the crystallographic orientation of the solid surface, the oxygen partial pressure, and the temperature. Each of these influences has been studied by the sessile drop technique, over the oxygen partial pressure range from 10^-2 to 10^-20 atm at temperatures of 1373°K, and 1523°K. The effect of oxygen partial pressure on the liquid copper surface energy follows the Gibbs Langmuir Law.

The crystallographic orientation of the sapphire surface causes variations in the contact angle. This is more significant for higher oxygen partial pressure, but is eliminated at higher temperature.

The temperature coefficient of the liquid copper surface energy was also determined, yielding a liquid copper surface energy equal to δ_lv = 1757-0.33T(°C) erg/cm².

The solid surface energy of the sapphire is estimated, yielding a value of δ_sv = 1833-0.47T(°K) erg/cm² , which can only apply at a temperature range between 1200°K and 2350°K"--Abstract, page ii.

Advisor(s)

Ownby, P. D.

Committee Member(s)

Howard, Scott A.
Kohser, Ronald A.

Department(s)

Materials Science and Engineering

Degree Name

M.S. in Ceramic Engineering

Publisher

University of Missouri--Rolla

Publication Date

Fall 1987

Pagination

viii, 47 pages

Note about bibliography

Includes bibliographical references (pages 39-43).

Rights

© 1987 Jenq Liu, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Thesis Number

T 5602

Print OCLC #

17682229

Link to Catalog Record

http://merlin.lib.umsystem.edu/record=b2418724~S5

Recommended Citation

Liu, Jenq, "The interfacial phenomena of liquid copper of sapphire substrates" (1987). Masters Theses. 656.
https://scholarsmine.mst.edu/masters_theses/656