Masters Theses

Abstract

"MOSFET is defined as metal oxide semiconductor field-effect transistor. The integrated circuit design relates strictly to logic and switching circuits rather than linear circuits. The design of MOS circuits is primarily one of charge and discharge of stray capacitance through MOSFETS used as switches and active loads. To better take advantage of the possibilities of MOS technology, four-phase (4[phi]) circuitry is developed. It offers higher speeds and lower power while permitting higher circuit density than does static or two-phase (2[phi]) logic. Equations are developed that apply directly to the design of four-phase logic along with examples of circuitry that show their use. The most unique of these is the equation for discharge through two or more MOSFETS in series from a saturated condition. the effects of stray capacitance on circuit performance are explained. Methods for overcoming deleterious effects and taking advantage of helpful effects are discussed and solved. The main effect is that of discharge of the stored charge on a logic node through the gate to source overlap capacitance when a phase clock returns to ground. In all, a complete method for designing 4[phi] circuitry is developed and explained in appropriate examples"--Abstract, page i.

Advisor(s)

Dillman, Norman G., 1938-2010

Committee Member(s)

Carson, Ralph S.
Szygenda, Stephen A.

Department(s)

Electrical and Computer Engineering

Degree Name

M.S. in Electrical Engineering

Publisher

University of Missouri--Rolla

Publication Date

1969

Pagination

iii, 55 pages

Note about bibliography

Includes bibliographical references (pages 85-87).

Rights

© 1969 Earl Moris Worstell, All rights reserved.

Document Type

Thesis - Open Access

File Type

text

Language

English

Library of Congress Subject Headings

Digital integrated circuits -- Design
Metal oxide semiconductor field-effect transistors

Thesis Number

T 2260

Print OCLC #

6009364

Electronic OCLC #

814306707

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