"This paper presents the results of an experimental investigation into the photomechanical effect in silicon. The effect was found to be very similar to the electromechanical effect. In both cases the phenomena observed is the softening of a thin surface layer of the material when it is either illuminated or when a current is flowing through the material. An anisotropy was observed in both the hardness and the photomechanical effect. Increasing temperatures tended to "washout" the photomechanical effect. The surface hardness and the photomechanical effect were found to depend heavily on proper surface preparation of the samples, however little dependence was shown on the impurity concentration within the samples. It was definitely established that high surface temperatures were not the cause of this softening. Most interesting and important, it was found that the radiation responsible for the photomechanical effect has an energy that is very close to that necessary to excite electrons into acceptor or out of donor levels of the semiconductor"--Abstract, page ii.
Leighly, Hollis P., 1923-2004
Wolf, Robert V., 1929-1999
Anderson, Richard A.
Zenor, Hughes M., 1908-2001
Materials Science and Engineering
M.S. in Metallurgical Engineering
National Science Foundation (U.S.)
University of Missouri at Rolla
vi, 151 pages, tables
© 1965 Ronald M. Oglesbee, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Silicon -- Electric properties
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1068680~S5
Oglesbee, Ronald M., "A study of the photomechanical effect in silicon" (1965). Masters Theses. 5244.