Dynamic capacitance of metal oxide semiconductor field effect transistors
"A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena"--Abstract, page ii.
Dillman, Norman G., 1938-2010
Levine, Norman E.
Bolander, Richard W., 1940-
Electrical and Computer Engineering
M.S. in Electrical Engineering
National Science Foundation (U.S.)
University of Missouri at Rolla
v, 76 pages
© 1968 Marion Wendell Tucker, All rights reserved.
Thesis - Open Access
Library of Congress Subject Headings
Electric power system stability
Metal oxide semiconductor field-effect transistors
Semiconductors -- Testing
Print OCLC #
Electronic OCLC #
Link to Catalog Recordhttp://laurel.lso.missouri.edu/record=b1067585~S5
Tucker, Marion Wendell, "Dynamic capacitance of metal-oxide-semiconductor field-effect transistors" (1968). Masters Theses. 5184.