"The theory for a planar semiconductor probe in a slightly ionized gas with small dc current densities is developed for a germanium probe immersed in a hydrogen plasma. First, the equilibrium characteristics due to the probe in the plasma are developed from Poisson's equation and current density equations. Then, the static nonequilibrium characteristics due to the probe are found by perturbing the equilibrium characteristics and substituting the perturbation terms into Poisson's equation and current density equations. The total current, I, is found to vary linearly with the applied voltages, V, and the ratios I/V are essentially the same for both intrinsic and n-type germanium probes if the width of the probes is much smaller than the dimensions of the plasma"--Abstract, page ii.
Boone, Jack L.
Adawi, I., 1930-
Venteicher, LeRoy P.
Electrical and Computer Engineering
M.S. in Electrical Engineering
University of Missouri--Rolla
vi, 68 pages
© 1973 Alfred Gene Williams, All rights reserved.
Thesis - Restricted Access
Library of Congress Subject Headings
Hydrogen plasmas -- Simulation methods
Probes (Electronic instruments)
Print OCLC #
Electronic OCLC #
Link to Catalog RecordElectronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library. http://laurel.lso.missouri.edu/record=b1066737~S5
Williams, Alfred Gene, "The static nonequilibrium characteristics of planar germanium probes in a slightly ionized hydrogen plasma for low injections" (1973). Masters Theses. 3524.