Masters Theses

Keywords and Phrases

Electron spin resonance

Abstract

"ESR has been used to study the formation of an amorphous layer in silicon by ion implantation. The room temperature implants were done at 20 keV with low dose rates. The critical dose was determined as a function of ion mass for six different ion species. Our experimental heavy ion results agree with those found by other ESR investigators at higher energy, but are not the same for light ions. However, our light and heavy ion results agree with electron microscope measurements for low energy implants. An energy-independent model for the formation of amorphous silicon by ion implantation has been used to explain previous results. An energy-dependent model has been developed by incorporating energy dependent range corrections. The results of all three independent experiments can be explained by the new model"--Abstract, page ii.

Advisor(s)

Hale, Edward Boyd

Committee Member(s)

Gerson, Robert, 1923-2013
James, William Joseph

Department(s)

Physics

Degree Name

M.S. in Physics

Sponsor(s)

United States. Air Force. Office of Scientific Research
Armed Forces Services Corporation
National Science Foundation (U.S.)

Publisher

University of Missouri--Rolla

Publication Date

1973

Pagination

vi, 25 pages

Note about bibliography

Includes bibliographical references (pages 23-24).

Rights

© 1973 John Robert Dennis, All rights reserved.

Document Type

Thesis - Restricted Access

File Type

text

Language

English

Library of Congress Subject Headings

Electron paramagnetic resonance
Ion implantation
Amorphous substances

Thesis Number

T 2854

Print OCLC #

6028779

Electronic OCLC #

911623354

Link to Catalog Record

Electronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library.

http://laurel.lso.missouri.edu/record=b1066723~S5

Share

 
COinS