Keywords and Phrases
Electron spin resonance
"ESR has been used to study the formation of an amorphous layer in silicon by ion implantation. The room temperature implants were done at 20 keV with low dose rates. The critical dose was determined as a function of ion mass for six different ion species. Our experimental heavy ion results agree with those found by other ESR investigators at higher energy, but are not the same for light ions. However, our light and heavy ion results agree with electron microscope measurements for low energy implants. An energy-independent model for the formation of amorphous silicon by ion implantation has been used to explain previous results. An energy-dependent model has been developed by incorporating energy dependent range corrections. The results of all three independent experiments can be explained by the new model"--Abstract, page ii.
Hale, Edward Boyd
Gerson, Robert, 1923-2013
James, William Joseph
M.S. in Physics
United States. Air Force. Office of Scientific Research
Armed Forces Services Corporation
National Science Foundation (U.S.)
University of Missouri--Rolla
vi, 25 pages
© 1973 John Robert Dennis, All rights reserved.
Thesis - Restricted Access
Library of Congress Subject Headings
Electron paramagnetic resonance
Print OCLC #
Electronic OCLC #
Link to Catalog RecordElectronic access to the full-text of this document is restricted to Missouri S&T users. Otherwise, request this publication directly from Missouri S&T Library or contact your local library. http://laurel.lso.missouri.edu/record=b1066723~S5
Dennis, John Robert, "Model correction for the formation of amorphous silicon by ion implantation" (1973). Masters Theses. 3513.