"Auger electron spectroscopy and mass analysis are used as complementary methods in evaluating desorption kinetics. For phosphorus on silicon, the order of desorption and activation energies of desorption are determined from continuously monitored phosphorus Auger electron signals during heating. These measurements indicate that diatomic phosphorus dissociates when adsorbed onto clean silicon. Mass spectrometer flash desorption spectra show that at least four distinct surface bonds are associated with the desorption of phosphorus. The dominant desorbed species is diatomic phosphorus at high coverage (> 0. 1 monolayer) and atomic phosphorus at low coverage (< 0.07 monolayer)"--Abstract, page ii.
Levenson, L. L., 1928-1998
James, William Joseph
Venable, Raymond L., 1935-2008
M.S. in Chemistry
National Science Foundation (U.S.)
University of Missouri--Rolla
vi, 29 pages
© 1973 Cesar Michel Magnin, All rights reserved.
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Magnin, Cesar Michel, "Desorption of phosphorus from Si (111) surfaces" (1973). Masters Theses. 3380.
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