A CN-FDTD Scheme and Its Application to VLSI Interconnects/Substrate Modeling
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Abstract
In this paper, a two-dimensional (2D) Crank-Nicholason (CN) finite difference time domain (FDTD) method is proposed for VLSI interconnect/substrate characterization. Through rigorous truncation and dispersion error analyses, a guideline on using this technique is presented. Several iterative solvers are investigated to accelerate the solution of the CN-FDTD scheme. Numerical examples are given to demonstrate the accuracy and the efficiency of the proposed algorithm.
This paper has been withdrawn.