Proton Damage in GaAs Solar Cells
This document has been relocated to http://scholarsmine.mst.edu/min_nuceng_facwork/1209
There were 10 downloads as of 28 Jun 2016.
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.