The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE
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Abstract
The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed
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