Abstract

We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.

Department(s)

Electrical and Computer Engineering

Second Department

Chemical and Biochemical Engineering

Keywords and Phrases

Si:H; Cl-Si:H; Amorphous Semiconductors; Double Amorphous Silicon Stacked Active Layer; Elemental Semiconductors; Leakage Currents; Off-State Photo-Leakage Current; Silicon; Thin Film Transistor; Thin Film Transistors

International Standard Serial Number (ISSN)

0018-9383

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1998 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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