Abstract

Because of the continued scaling of technology and supply-threshold voltage, leakage power has become more significant in power dissipation of nanoscale CMOS circuits. Therefore, estimating the total leakage power is critical to designing low-power digital circuits. In nanometer CMOS circuits, the main leakage components are the subthreshold, gate-tunneling, and reverse-biased junction band-to-band-tunneling (BTBT) leakage currents.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Gate-Tunneling Current; Input Pattern Generation; Leakage Power; Nanometer CMOS; Subthreshold Leakage Current; Electron Tunneling; Tunneling (Excavation); Leakage Currents; Cell Characterization

International Standard Serial Number (ISSN)

0740-7475

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2007 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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