Frequency-selective power transducers: hexagonal ferrite resonator - semiconductor element.
The transducers studied herein allow for frequency-selective measurement of mm-wave power parameters. Frequency selectivity is assured by a monocrystalline hexagonal ferrite resonator (HFR). The HFR is in direct contact with a semiconductor element (SE)—an unpackaged Hall-element, or a chip transistor (or diode). Power absorbed by the HFR at the ferromagnetic resonance converts to heat, and the heat flux penetrates through the current-carrying SE. A number of thermo/electro/magnetic phenomena accompany the Hall-effect in a semiconductor and cause a voltage in addition to the Hall-effect voltage. The conversion coefficient of a transducer is analyzed using the power balance equation. Some experimental results using the designed power transducers in the 8-mm waveband are presented.
M. Koledintseva, "Frequency-selective power transducers: hexagonal ferrite resonator - semiconductor element.," Proc. Progress in Electromagnetic Research Symposium PIERS-2006, EMW Publishing / Electromagnetic W, Mar 2006.
Electrical and Computer Engineering
Keywords and Phrases
Hexagonal Ferrite Resonator (HFR); Semiconductor Element (SE)
Library of Congress Subject Headings
Article - Conference proceedings
© 2006 EMW Publishing / Electromagnetic W, All rights reserved.