The transducers studied herein allow for frequency-selective measurement of mm-wave power parameters. Frequency selectivity is assured by a monocrystalline hexagonal ferrite resonator (HFR). The HFR is in direct contact with a semiconductor element (SE)—an unpackaged Hall-element, or a chip transistor (or diode). Power absorbed by the HFR at the ferromagnetic resonance converts to heat, and the heat flux penetrates through the current-carrying SE. A number of thermo/electro/magnetic phenomena accompany the Hall-effect in a semiconductor and cause a voltage in addition to the Hall-effect voltage. The conversion coefficient of a transducer is analyzed using the power balance equation. Some experimental results using the designed power transducers in the 8-mm waveband are presented.
M. Koledintseva, "Frequency-Selective Power Transducers "Hexagonal Ferrite Resonator-Semiconductor Element"," Proceedings of the Progress In Electromagnetics Research Symposium 2006 (2006, Cambridge, MA), pp. 241-245, EMW Publishing, Mar 2006.
Progress In Electromagnetics Research Symposium 2006, PIERS2006 (2006: Mar. 26-29, Cambridge, MA)
Electrical and Computer Engineering
Keywords and Phrases
Hexagonal Ferrite Resonator (HFR); Semiconductor Element (SE); Ferromagnetic resonance
International Standard Serial Number (ISSN)
Article - Conference proceedings
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