Title

Frequency-selective power transducers: hexagonal ferrite resonator - semiconductor element.

Abstract

The transducers studied herein allow for frequency-selective measurement of mm-wave power parameters. Frequency selectivity is assured by a monocrystalline hexagonal ferrite resonator (HFR). The HFR is in direct contact with a semiconductor element (SE)—an unpackaged Hall-element, or a chip transistor (or diode). Power absorbed by the HFR at the ferromagnetic resonance converts to heat, and the heat flux penetrates through the current-carrying SE. A number of thermo/electro/magnetic phenomena accompany the Hall-effect in a semiconductor and cause a voltage in addition to the Hall-effect voltage. The conversion coefficient of a transducer is analyzed using the power balance equation. Some experimental results using the designed power transducers in the 8-mm waveband are presented.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Hexagonal Ferrite Resonator (HFR); Semiconductor Element (SE)

Library of Congress Subject Headings

Ferromagnetic resonance

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2006 EMW Publishing / Electromagnetic W, All rights reserved.


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