A Novel Technique of Analyzing Multiexponential Transients for DLTS Spectra

Author

C. W. Wang
Cheng-Hsiao Wu, Missouri University of Science and TechnologyFollow

Abstract

A new method is presented here to experimentally decompose capacitance transients into the appropriate components from the closely-spaced deep trap states. Using the Temperature Dependent Pulsewidth-DLTS (TDP-DLTS) technique, we show that two closely-spaced DX centers in Se-doped Al_0.6Ga_0.4As laser diodes can be successfully separated. We produce an Arrhenius plot for each individual component, which yield the thermal activation energies, emission rates and capture cross sections of the two closely spaced traps. Without any complicated mathematics or program, TDP-DLTS provides an accurate, convenient and consistent method for decomposing the multiexponential transients of DLTS spectra.

Recommended Citation

C. W. Wang and C. Wu, "A Novel Technique of Analyzing Multiexponential Transients for DLTS Spectra," Solid-State Electronics, vol. 35, no. 12, pp. 1771 - 1777, Elsevier, Dec 1992.

The definitive version is available at https://doi.org/10.1016/0038-1101(92)90259-F

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting selenium; Spectroscopic analysis, Arrhenius plot; Capacitance transients decomposition; Closely spaced traps; Deep level transient spectroscopy (DLTS); DX center separation; Multiexponential transients; Temperature dependent pulsewidth-DLTS technique; Thermal activation energies, Semiconductor lasers

International Standard Serial Number (ISSN)

0038-1101

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1992 Elsevier, All rights reserved.

Publication Date

01 Dec 1992