Abstract

The photoinduced transient current from an amorphous silicon thin-film transistor is computed and the mechanism described in terms of trap-state filling dynamics. The direction of the current flow and the location of the transient peak depends strongly on the distributions of donorlike and acceptorlike trap states in the neighborhood of the dark Fermi level. We show that the transient current can flow in the same direction as in the crystalline transistor, as well as in the opposite direction. There is also an interesting cross-over behavior in which the transient current flows out of the drain terminal as a pulse of positive charge, and then immediately reverses its direction. There is a broadening effect of the transient peak by a simultaneous switch on of the gate voltage. The transient peak typically occurs at 10-4 s and an example is provided. The transient current can be greatly diminished by switching the gate voltage long before illumination, or by doping the channel either partially or completely.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Amorphous silicon; Carrier concentration; Computational methods; Computer simulation; Crystalline materials; Current voltage characteristics; Fermi level; Induced currents; Semiconductor doping, Crystalline field effect transistor; Drain current; Hydrogenated amorphous silicon; Photoinduced transient current, Thin film transistors

International Standard Serial Number (ISSN)

0021-8979

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1997 American Institute of Physics (AIP), All rights reserved.

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