Performance Evaluation of Various Semiconductor Technologies for Automotive Applications
This paper evaluates the commercially available semiconductor switches for automotive applications. For this purpose, a conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with a Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Performance criteria for automotive drive systems are compared between the two switches. Electromagnetic interferences due to the switching times of the switches are studied. A test is performed to measure the actual power losses for both switches. Using the simulated model of the heatsink, the temperature of the junction for each switch is estimated. Afterwards, the results are compared with the data provided in the technical documents of the switches.
P. Shamsi et al., "Performance Evaluation of Various Semiconductor Technologies for Automotive Applications," Proceedings of the 2013 28th Annual IEEE Applied Power Electronics Conference and Exposition (2013, Long Beach, CA), pp. 3061-3066, Institute of Electrical and Electronics Engineers (IEEE), Mar 2013.
The definitive version is available at http://dx.doi.org/10.1109/APEC.2013.6520736
2013 28th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (2013: Mar. 17-21, Long Beach, CA)
Electrical and Computer Engineering
Keywords and Phrases
Automotive Applications; Drive Systems; Performance Criterion; Semiconductor Technology; Silicon Carbides (SiC); Simulated Model; Switching Time; Technical Documents; Automobiles; Computer Simulation; Digital Storage; Electromagnetic Pulse; Electron Beam Lithography; Insulated Gate Bipolar Transistors (IGBT); MOSFET Devices; Semiconductor Device Manufacture; Silicon Carbide; Power Electronics
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International Standard Serial Number (ISSN)
Article - Conference proceedings
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