Near-Field Shielding Performances of Absorbing Materials for Integrated Circuits (IC) Applications. Part II: Crossing Excitation
This contribution analyzes the performance of a commercial absorbing material, in near field, selected for the reduction of electromagnetic emissions generated by an integrated circuit (IC). The signal port is placed as far as possible from the ground port, in order to force the current to follow the longest path. Shielding effectiveness, wave impedance, and Reflection, Transmission, and Absorbtion (RTA) plots, obtained from full-wave simulations, are compared with the configuration 'lateral' described in Part I, in which the ports are placed in two adjacent pins of the IC. Both arrangements reported in Part I for the absorber are adopted: as patch on top of the plastic package of the IC and as an enclosure totally covering the IC.
S. Piersanti et al., "Near-Field Shielding Performances of Absorbing Materials for Integrated Circuits (IC) Applications. Part II: Crossing Excitation," IEEE Transactions on Electromagnetic Compatibility, vol. 60, no. 1, pp. 196-201, Institute of Electrical and Electronics Engineers (IEEE), Feb 2018.
The definitive version is available at http://dx.doi.org/10.1109/TEMC.2017.2731794
Electrical and Computer Engineering
Keywords and Phrases
Electric Impedance; Electromagnetic Shielding; Plastics; Reflection; Shielding; Timing Circuits; Absorbing Materials; Attenuation; Face; Integrated Circuit Modeling; Lossy Materials; Near Fields; Pins; Ports (Computers); Wave Impedances; Integrated Circuits; Near Field (NF); Wave Impedance
International Standard Serial Number (ISSN)
Article - Journal
© 2018 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.