A radio frequency measurement technique for measuring the bulk resistivity of II-VI compound semiconductors is described. Wafers of n-type CdS are used to demonstrate the technique. An equivalent circuit model is introduced which predicts a frequency dependence for the CdS wafer impedance which agrees well with the experiment. The model assumes a broad distribution of relaxation times associated with the polarization. The radio frequency method gives values for the resistivity within 15% of four point probe measurements for the lower resistivity wafers, and within 5% for the higher resistivity wafers.
E. D. Wheeler et al., "A Contactless Method for Measuring the Bulk Resistance of II-VI Compound Semiconductors," Review of Scientific Instruments, vol. 65, no. 12, pp. 3844-3847, American Institute of Physics (AIP), Dec 1994.
The definitive version is available at http://dx.doi.org/10.1063/1.1145175
Electrical and Computer Engineering
Keywords and Phrases
Electrical Resistivity; II-VI Semiconductors; Semiconductors; Semiconductor Device Modeling; Contact Resistance
International Standard Serial Number (ISSN)
Article - Journal
© 1994 American Institute of Physics (AIP), All rights reserved.