Abstract

A radio frequency measurement technique for measuring the bulk resistivity of II-VI compound semiconductors is described. Wafers of n-type CdS are used to demonstrate the technique. An equivalent circuit model is introduced which predicts a frequency dependence for the CdS wafer impedance which agrees well with the experiment. The model assumes a broad distribution of relaxation times associated with the polarization. The radio frequency method gives values for the resistivity within 15% of four point probe measurements for the lower resistivity wafers, and within 5% for the higher resistivity wafers.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Electrical Resistivity; II-VI Semiconductors; Semiconductors; Semiconductor Device Modeling; Contact Resistance

International Standard Serial Number (ISSN)

0034-6748

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1994 American Institute of Physics (AIP), All rights reserved.

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