Title

An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor

Abstract

An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18µm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.

Department(s)

Electrical and Computer Engineering

Keywords and Phrases

Decoupling Capacitor; Electromagnetic Bandgap (EBG); On-Chip EBG Structure; Simultaneous Switching Noise (SSN)

International Standard Serial Number (ISSN)

15311309

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Share

 
COinS