An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor
An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18µm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.
C. Hwang et al., "An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor," IEEE Microwave and Wireless Components Letters, vol. 21, no. 8, pp. 439-441, Institute of Electrical and Electronics Engineers (IEEE), Aug 2011.
The definitive version is available at http://dx.doi.org/10.1109/LMWC.2011.2158534
Electrical and Computer Engineering
Keywords and Phrases
Decoupling Capacitor; Electromagnetic Bandgap (EBG); On-Chip EBG Structure; Simultaneous Switching Noise (SSN)
International Standard Serial Number (ISSN)
Article - Journal
© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.