Title

Effects of Time-Variant Non-Linear TSV Parameters on Transient Analysis for Signal Integrity

Abstract

This paper looks at the impact of considering the exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.

Meeting Name

2015 Asia-Pacific International Symposium on Electromagnetic Compatibility (2015: May 26-29, Taipei, Taiwan)

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Center for High Performance Computing Research

Keywords and Phrases

Silicon; Capacitance; Substrates; Through-Silicon Vias; Equivalent Circuits; Crosstalk; Integrated Circuit Modeling

International Standard Serial Number (ISSN)

2162-7673

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2015 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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