Impact of Frequency-Dependent and Nonlinear Parameters on Transient Analysis of Through Silicon Vias Equivalent Circuit
This paper introduces an equivalent circuit model for through silicon vias including the nonlinear effect of metal-oxide-semiconductor capacitance. This nonlinear effect is combined to the frequency-dependent via resistance and inductance, as well as capacitance and conductance of the silicon substrate for a transient analysis. The impact of frequency-dependent RLCG parameters and the nonlinear depletion capacitance on signal propagation, crosstalk and eye diagram is studied using the proposed equivalent circuit model.
S. Piersanti et al., "Impact of Frequency-Dependent and Nonlinear Parameters on Transient Analysis of Through Silicon Vias Equivalent Circuit," IEEE Transactions on Electromagnetic Compatibility, vol. 57, no. 3, pp. 538-545, Institute of Electrical and Electronics Engineers (IEEE), Jun 2015.
The definitive version is available at https://doi.org/10.1109/TEMC.2015.2391911
Electrical and Computer Engineering
Center for High Performance Computing Research
Second Research Center/Lab
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Capacitance; Circuit simulation; Circuit theory; Crosstalk; Electronics packaging; Equivalent circuits; Integrated circuit interconnects; Metals; MOS devices; Semiconducting silicon; Silicon; Transient analysis; Equivalent circuit model; Frequency dependent; Frequency dependent parameters; Metal oxide semiconductor; Non-linear parameters; Signal Integrity; Silicon substrates; Through silicon vias; Three dimensional integrated circuits; Nonlinear depletion (ND) capacitance
International Standard Serial Number (ISSN)
Article - Journal
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