Impact of Frequency-Dependent and Nonlinear Parameters on Transient Analysis of Through Silicon Vias Equivalent Circuit

Abstract

This paper introduces an equivalent circuit model for through silicon vias including the nonlinear effect of metal-oxide-semiconductor capacitance. This nonlinear effect is combined to the frequency-dependent via resistance and inductance, as well as capacitance and conductance of the silicon substrate for a transient analysis. The impact of frequency-dependent RLCG parameters and the nonlinear depletion capacitance on signal propagation, crosstalk and eye diagram is studied using the proposed equivalent circuit model.

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Center for High Performance Computing Research

Second Research Center/Lab

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

Capacitance; Circuit simulation; Circuit theory; Crosstalk; Electronics packaging; Equivalent circuits; Integrated circuit interconnects; Metals; MOS devices; Semiconducting silicon; Silicon; Transient analysis; Equivalent circuit model; Frequency dependent; Frequency dependent parameters; Metal oxide semiconductor; Non-linear parameters; Signal Integrity; Silicon substrates; Through silicon vias; Three dimensional integrated circuits; Nonlinear depletion (ND) capacitance

International Standard Serial Number (ISSN)

0018-9375

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2015 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Jun 2015

Link to Full Text

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